Component assemblies and embedding for high density electronics

ABSTRACT

Provided is a high-density multi-component package comprising a first module interconnect pad and a second module interconnect pad. At least two electronic components are mounted to and between the first module interconnect pad and the second module interconnect pad wherein a first electronic component is vertically oriented relative to the first module interconnect pad. A second electronic component is vertically oriented relative to the second module interconnect pad.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention claims priority to U.S. Provisional ApplicationNo. 62/962,340 filed Jan. 17, 2020 which is incorporated herein byreference.

FIELD OF THE INVENTION

The present invention is related to improved assemblies for electroniccomponents. More specifically, the present invention is related toembedded electronic components which allows for a high density ofelectronic components and which is particularly suitable for high powerelectronics as achieved with wide band-gap semiconductor materials suchas SiC and GaN.

BACKGROUND

There is an on-going need for improved component assemblies,particularly, for use with high-power electronics such as those emergingfrom the use of wide band gap semiconductor materials such as SiC, orGaN instead of silicon. These wide band gap semiconductors operate atmuch higher power, at higher frequency, to achieve higher efficiencypower conversion that allows for further miniaturization of circuitry.Unfortunately, the heat generated is difficult to mitigate usingconventional techniques.

Multilayer Ceramic Capacitors (MLCC) are being used increasingly in highpower applications where they are exposed to high amounts of AC voltage.The resulting ripple current produced in the capacitors causes them toheat-up. Power dissipated (P) is defined by the equation P=I²R where Iis current and R is the equivalent series resistance (ESR). Capacitorsdraw more AC current as frequency increases so I² increases more thanESR decreases. Since wide band gap semiconductors are operated at higherfrequencies than silicon this becomes an important consideration.

In an MLCC heat is dissipated at the surface of the capacitor at eitherthe ceramic surface or through the external terminations. It isgenerally recognized that self-heating of about 20-25° C., at thesurface, is a safe condition for these types of capacitors but anyadditional heating can result in thermal runaway and failure of theMLCC. The internal metal electrodes are effective heat conductorswhereas the ceramic dielectrics are typically very good thermalinsulators. Increasing the number of internal electrodes in contact withthe external terminations can therefore reduce ESR and self-heating.This is also desirable with respect to increasing the capacitance.Capacitance (C) is defined by the equation C=ε_(r)ε₀An/t; where ε_(r) isthe relative permittivity of the dielectric; ε₀ is a constant equal tothe permittivity of free space; A is the overlap area for each internalconductive layer, also referred to as an active; n is the number ofactives and t is the separation distance or thickness between theelectrodes. Therefore, it is an ongoing desire to increase the number oflayers and overlap area while decreasing the layer separation. However,in a given MLCC reducing the active thickness of the ceramic to increasecapacitance reduces the voltage handling capability of the MLCC. Forthis reason, it has become necessary to package these capacitors inlarge assemblies that require large circuit board areas. Largeassemblies are contrary to the ongoing desire to miniaturize electronicsand therefore there is increased interest in embedding MLCC's incircuits or in providing modules with multiple MLCC's that provide ahigh-density package that can be integrated into a heterogeneouspackages.

U.S. Pat. No. 8,331,078 teaches MLCC's arranged in non-ferrous leadframes wherein the base internal electrodes of the capacitors and theedge surfaces of the external termination are perpendicular to themounting substrate. This arrangement confers low ESR and low ESL to theresulting assembly. U.S. Pat. No. 9,875,851 teaches an optimized MLCCstructure wherein the internal electrodes are arranged perpendicular tothe plane of assembly to confer a low ESR of 3 to 5 mΩ in a frequencyrange from kHz to MHz. U.S. Pat. No. 9,905,363 teaches capacitors basedon antiferroelectric ceramic dielectric arranged on lead frames andincorporated within a module package.

More recently, U.S. Pat. No. 10,325,895 described a semiconductor modulewith circuit elements, such as capacitors and resistors, bonded betweena plurality of metal plates bonded to at least one switching element.These two terminal circuit elements are bonded in an orientationvertical to the length of the module. The circuit elements areorientated vertically between metal plates of a semiconductor modulewherein multiple MLCC's are utilized to illustrate the benefits ofvertical orientation.

In these prior art teachings, the circuit elements must be incorporatedinto the power electronics module as a separate component. In the caseof the leaded capacitors these require customized assembly which isinefficient from a cost and productivity perspective. Conventionalsurface mount assembly techniques are readily available, but thesubsequent module has relatively low package density.

Embedding smaller MLCC's is gaining in popularity and some examples aredescribed in U.S. Pat. No. 8,720,050.

The prior art examples of embedded capacitors require via connections tothe embedded components. More recently components have been embedded inpolymer printed circuit boards such as described in U.S. Pat. No.9,386,702 where vias are used to connect the embedded components.

In prior art embodiments, MLCC's can be embedded by placing their innerelectrodes parallel to the plane of the circuit board. In the subsequentlayering process cavities are formed around the parts and the circuitinterconnections are then formed through vias to their terminals. Incurrent practice copper vias are formed to the terminals through FR4circuit materials. U.S Published Patent Application US2019/0215950describes multiple-diameter laser filled bores to address some of thelimitations of embedding components in circuits in this way. As largernumbers of smaller components are embedded in circuits it becomesdifficult to register the laser bores for vias and forming the vias isvery time consuming as is the subsequent copper plating of the vias.This process also requires the components to have compatibleterminations that are typically copper for MLCC. Copper terminations areprone to oxidation if stored for extended times prior to assembly andhave limited compliancy.

In spite of the advances the art still lacks adequate componentassemblies which are suitable for use in high power applications such asprovided by the use of SiC wide band-gap materials. Provided herein areimproved component assemblies and particularly high-density electronicsutilizing embedded components, particularly MLCC's.

SUMMARY OF THE INVENTION

The present invention is related to improved component assemblies.

More specifically, the present invention is related to improvedcomponent assemblies which are particularly suitable for use with highpower applications such as available with SiC and GaN based wideband-gap semiconductor devices.

A particular feature of the present invention is the ability toincorporate cooling components.

These and other embodiments, as will be realized, are provided in ahigh-density multi-component package comprising a first moduleinterconnect pad and a second module interconnect pad. At least twoelectronic components are mounted to and between the first moduleinterconnect pad and the second module interconnect pad wherein a firstelectronic component is vertically oriented relative to the first moduleinterconnect pad. A second electronic component is vertically orientedrelative to the second module interconnect pad.

Yet another embodiment is provided in a high-density multi-componentpackage comprising a first electronic component and a second electroniccomponent. The first electronic component and second electroniccomponent each comprise a first external termination and a secondexternal termination wherein each first external termination and eachsecond external termination comprises an edge surface and side surfaces.The package also comprises a wide band-gap semiconductor devicecomprising a first interconnect pad and a second interconnect padwherein the first interconnect pad is electrically connected to the edgesurface of the first external termination and the second interconnectpad is electrically connected to the edge surface of the secondelectronic component.

Yet another embodiment is provided in a method for forming ahigh-density multi-component package. The method includes:

-   -   providing a wide band-gap semiconductor device comprising a        first interconnect pad and a second interconnect pad;    -   providing a substrate;    -   providing at least two electronic components; and    -   mounting the two electronic components between the substrate and        wide band-gap semiconductor device wherein the two electronic        components are vertically oriented.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional representation of a package withstandard MLCC's, representing electronic components, arranged forinductive cancellation.

FIG. 2 is an electrical schematic diagram of a DC link capacitor.

FIG. 3 is a schematic representation of integrated assembled capacitors.

FIG. 4 is a schematic representation of a high-density capacitorpackage.

FIG. 5 is a schematic representation of a high-density packageincorporating cooling elements and other components.

FIG. 6 is a schematic exploded view illustrating component assembly.

FIG. 7 is a schematic diagram of an enclosed component package.

FIG. 8 is a schematic diagram of an embedded circuit board showingcomponents connected through multiple layers.

FIG. 9 is a schematic representation of a stack of capacitors andintegral cooling element.

FIG. 10 is a schematic representation of a cooling element with a pickand place pad.

FIG. 11 illustrates the current flow utilized for demonstration of theinvention.

FIG. 12 illustrates a base with recess areas.

FIG. 13 illustrates an electrically insulating restraint.

DESCRIPTION

The present invention is related to improved component assemblies whichare particularly suitable for use in high power applications, such asthose afforded by wide band-gap materials such as SiC and GaN. Morespecifically, the present invention is related to embedded components,particularly MLCC's, which allow for reduced parasitics and reducedfailure in high power applications.

It is an objective of the present invention to provide a high-densitypackage using common surface mount assembly techniques to form an arrayof components, particularly but not limited to MLCC's, for subsequentintegration in a power module or laminated circuit board. The electricaland thermal performance of this high density package can be optimized bythe techniques described herein and multiple components can be readilyincorporated within the package. A particular advantage, relative to theprior art, is a minimization or elimination of the necessity of throughvias for electrical conductivity thereby simplifying production.

The invention will be described with reference to the figures forming anintegral, non-limiting, component of the disclosure. Throughout thevarious figures similar elements will be numbered accordingly.

The present invention provides module solutions and embedded packageswhereby the components, preferably including MLCC's, are assembled inthe Z-direction with the internal electrodes perpendicular to the planeof the circuit board or module and the edge surface of the externalterminations in direct electrical contact with metal terminations on thecircuit board or module. Although this is not the direction of typicalsurface mounted assemblies this provides several key advantages over theprior art.

In an embodiment of the invention, heat is removed primarily through theexternal terminations which are directly contacted throughinterconnects. This allows the external terminations to function as bothan electrical and thermal dissipation interface.

In an embodiment of the invention, cooling channels and elements can bereadily incorporated into the package thereby allowing for thedissipation of heat from the components by passive or active means.Alternatively, thermally conducting materials can be readilyincorporated in the package to facilitate dissipation of heat away fromthe package. Cooling channels are particularly suitable for use inmultilayer ceramic capacitor structures for use at high power aredescribed in U.S. Pat. No. 10,147,544.

Embedding the components, preferable MLCC's, minimizes or eliminatesreliance on through vias to form interconnections with the componentsthereby increasing productivity.

The embedded components, particularly MLCC's, allows the components tobe arranged in a way that reduces electrical series inductance andelectrical series resistance and allows the integration of amultiplicity of components such as sensor, resistors and inductors whichare integrated within the package.

In an embodiment of the invention electronic components, particularlyMLCC's, are arrangement to confer a low Equivalent Series Inductance(ESI) as illustrated in FIG. 1 . The alternating polarity provides for adecrease in the size of the inductive loop. The minimized electricalpath length, achieved by decreasing the distance between the MLCC andmetals used in interconnections also allows for a low ESR. Packagingwithin a substrate allows for an even lower ESI particularly when thereare multiple rows of MLCC's arranged with opposing polarities.

In FIG. 1 , components, 10, such as MLCC's, are alternately mounted tomounting pads, 12, wherein adjacent pads on substrates, 14, are ofopposite polarity. The charge therefore flows in opposite directions, asindicated by the arrows, for adjacent components thereby providinginductive cancellation.

Low inductances are beneficial because higher switching current edgerates and higher switching frequencies in Wide Band-Gap semiconductorapplications, particularly SiC based semiconductors, create greatervoltage ringing which drives inductive loads. Snubber capacitors placedclose to a switch package helps to reduce this ringing. Integrating thesnubber in the substrate further reduces the total loop inductance fromthe snubber to the switching device maximizing the benefit of thesnubbers. To achieve zero-voltage switching (ZVS) it is desirable toincorporate snubber capacitors as close to the switches as possible andfor a given circuit it may also be desirable to incorporate a resistorin this assembly to mitigate the aforementioned ringing.

An important aspect of the current invention is the ability to enablelarger DC link capacitor assemblies to be integrated withsemiconductors. A DC-Link is shown schematically in the circuit diagramof FIG. 2 . Larger capacitance, DC-Links can be achieved without thenecessity of long, continuous metal leads thereby also decreasing theproblems associated with coefficient of thermal expansion (CTE)mismatches which occur with conventional assemblies.

In FIG. 2 the schematic diagram, 16, illustrates a pair of switches, 18,for a high voltage DC link, 20, comprising an inverter output, 22, and aDC link capacitor, 24, as would be realized by those of skill in theart.

An embodiment of the invention will be described with reference to FIG.3 . In FIG. 3 components, 10, represented as capacitors without limitthereto, are integrated with switches, 18, preferably within amulti-switch module area, 26. The switches are mounted to moduleinterconnect pads, 30, by a conductive adhesive, 32, preferably aTransient Liquid Phase Sintering (TLPS) adhesive. Optional vias, 34,through an optional substrate, 36, provide electrical connectivity tocomponent terminations, 38, wherein adjacent component terminations areof opposite polarity. The first external terminations, 40, of thecomponents, 10, are in direct electrical contact with the componentterminations by a conductive adhesive and preferably a TLPS. A circuitboard, 42, comprising terminations, 44, provides connectivity toadditional electrical functionality. In a particularly preferredembodiment, the components are MLCC's comprising internal electrodes,46, wherein adjacent internal electrodes are of opposite polarity aswell known in the art. The internal electrodes are perpendicular to themodule interconnect pad and the lone edge surface, 48, of the externaltermination is parallel to the module interconnect pad and the multipleside surfaces, 50, of the external termination are all perpendicular tothe interconnect pad which is referred to herein as vertically oriented.Vertically oriented is distinguished from horizontally oriented. Inhorizontally oriented components at least one of the side surfaces, 50,and typically two side surfaces of the external termination are parallelto the module interconnect pad. In horizontally oriented components theinternal electrodes can be parallel to the module interconnect pad,which is referred to as standard orientation. Alternatively, invertically oriented components the internal electrodes can beperpendicular to the module interconnect pad with the edge surfaceperpendicular to the module interconnect pad.

As illustrated in FIG. 3 , a particular feature is the ability to forman array of components, particularly MLCC's without lead frames.Providing a stack of components without lead frames reduces materialcost, improves manufacturing efficiency and reduces internal parasiticeffects such as resistance.

In a particularly preferred embodiment, the module interconnect pads arein direct physical contact with the edge surface of the externaltermination of the component thereby eliminating the substrate and via.Direct physical contact is defined herein as a contact with only aconductive adhesive between the elements in direct physical contact suchas would be realized with a module interconnect pad in direct physicalcontact with the MLCC termination by a conductive adhesive such as asolder, high temperature conductive adhesive or transient liquid phasesintering (TLPS) conductive adhesive.

TLPS adhesives are mixtures of two or more metals or metal alloys priorto exposure to elevated temperatures thereby distinguishing the thermalhistory of the material. TLPS adhesives exhibit a low melting pointprior to exposure to elevated temperatures, and a higher melting pointfollowing exposure to these temperatures. The initial melting point isthe result of the low temperature metal or an alloy of two lowtemperature metals. The second melting temperature is that of theintermetallic formed when the low temperature metal or alloy, forms anew alloy with a high temperature melting point metal thereby creatingan intermetallic having a higher melting point. TLPS adhesives form ametallurgical bond between the metal surfaces to be joined. Unliketin/lead or lead (Pb) free solders, the TLPS do not spread as they formthe intermetallic joint. Rework of the TLPS system is very difficult dueto the high secondary reflow temperatures. Transient Liquid PhaseSintering is the terminology given to a process to describe theresulting metallurgical condition when two or more TLPS compatiblematerials are brought in contact with one another and raised to atemperature sufficient to melt the low temperature metal. To create aTLPS process or interconnect, at least one of those metals being from afamily of metals having a low melting point such as tin (Sn), Indium(In) and the second coming from a family having high melting points suchas Copper (Cu) or Silver (Ag). When Sn and Cu are brought together, andthe temperature elevated the Sn and Cu form Cu/Sn intermetallics and theresulting melting point is higher than the melting point of the metalhaving a low melting point. In the case of In and Ag, when sufficientheat is applied to the In to cause it to melt it actually diffuses intothe Ag creating a solid solution which in turn has a higher meltingpoint than the In itself. TLPS will be used to generically reference theprocess and the TLPS compatible materials used to create a metallurgicalbond between two or more TLPS compatible metals. TLPS provides anelectrical and mechanical interconnect that can be formed at arelatively low temperature (<300° C.) and having a secondary re-melttemperature >600° C. These temperatures are determined by the differentcombination of TLPS compatible metals. TLPS will be used to genericallypertain to the process and materials used to create a TLPS metallurgicalbond or interconnect.

It will be realized by those skilled in the art that components,particularly MLCC's, can be incorporated in these packages to perform amultitude of functionalities. By way of example, by combining multiplecapacitors within the package and contacting them to the same pad largerDC-Link capacitances can be realized. Arrays of pre-assembled capacitorsmay be incorporated in this way or by placement of individualcomponents. In FIG. 3 the package is connected to the module but usingthe same packaging techniques a high-density capacitor package can beproduced as shown in FIG. 4 .

In FIG. 4 , an array of vertically oriented components, 51, preferablyat least some of which are MLCC's, are sandwiched within a packagecomprising a base, 52, and a top, 54, wherein it is preferred that thebase and top provide an enclosure with sides, 53. The edge surface ofthe external termination of adjacent components are electricallyconnected to a positive connector tab, 56, and the opposite edge surfaceof the external termination of adjacent connectors are electricallyconnected to a negative connector tab, 57, wherein positive and negativeare arbitrarily assigned for the purposes of discussion. Assuming allcomponents are MLCC's, for the purpose of discussion, a large number ofcapacitive couples, each with any number of MLCC's, can be envisionedfrom the illustration with three separate capacitive couples illustratedwithout limit thereto. Alternatively, components other than MLCC's canbe utilized within the enclosure to achieve various electricalfunctionalities. Optional insulated screws, 58, such as a Teflon® screw,can be utilized to add mechanical restraint to the package or forattachment of the package to a substrate. Flexible terminations can beused for forming electrical attachment to the components and compliantterminations can be utilized for the connector tabs.

An embodiment of a package, 60, is illustrated in schematic view in FIG.5 without components for clarity. In FIG. 5 modular interconnect pads,62, are illustrated on the top, 64, of the package to afford thecontacts to integrate with a module wherein the arrangement of modularinterconnect pads are a design choice and not particularly limited bythe figures or otherwise herein. The base, 66, also has terminations,68, wherein the terminations in the base preferably match the positionof the modular interconnect pads as would be realized from the teachingsherein. A particular advantage is the ability to incorporate auxiliarycircuitry on surfaces within the interior, the exterior, or any of thesides of the package thereby increasing functionality of the package. Ina preferred embodiment the package comprises cooling channels, 70, whichallow a cooling medium to pass into and preferably through the packagefor heat dissipation or mediation from the interior of the package. Thecooling medium preferably flows, without limit thereto, wherein the flowof the cooling medium may be convection flow or forced flow. For thepurposes of the instant invention forced flow is defined as a flow whichis enhanced, such as by a fan or pump, without limit to the type of fanor pump. Convection, or convective, flow is defined as flow which is notenhanced but instead flows due to thermal gradients.

With large arrays of components, particularly MLCC's, dissipating heatimproves the longevity and functionality of the package. In an MLCC heatis dissipated primarily by thermal conduction from the inner electrodesthrough the external terminations of the capacitors. Although it isimportant to minimize the ESR in very high-power applications it isnecessary to cool the MLCC to keep them within their reliableoperational temperature range. This arrangement of components,particularly MLCC's, allows cooling channels to be readily incorporatedwithin the package during assembly. These channels may contain a passivecooling element to dissipate heat or be actively cooled. When combinedwith the power module as shown in FIG. 3 . It may be desirable to form acombination package capable of cooling both the components and module.

The assembly stages of a representative package are shown in FIG. 6 . InFIG. 6 , a basic assembly is illustrated schematically in exploded viewand the method of assembly will be described relative thereto. Thecomponents may be a pre-assembled stack, 72, to facilitate ease ofplacement. Alternatively, individual components, 74, may be assembled.In the case of individual components wherein the length, measured fromedge surface to edge surface, is much larger than the width, measured asthe largest dimension perpendicular to the length, it is preferred touse recessed areas, 73, within the base to achieve stability asillustrated schematically in FIG. 12 . To facilitate rapid placementcomponents may require packaging in the z-direction, defined asperpendicular to the substrates, so placement is done on thetermination. Electrically insulated restraints, 91, can be employed asillustrated in FIG. 13 .

Electrical contacts extending through the base and top are not shown inFIG. 6 nor is the incorporation of cooling channels. As illustrated inFIG. 6 , a base, 76, is provided with conductor traces, 78, formedthereon in accordance with standard practice. An interconnect, 80, isformed by any method known in the art such as printing or dispensingtechniques. This include methods such as screen printing, gravureprinting, pad printing and pressure dispensing, auger dispensing and inkjet printing. The pre-assembled stack, 72, or individual components, 74,are placed into proper position in accordance with standard proceduresin the art. A sandwich is then formed between two bases or substrates toform the package.

It is highly preferred that the interconnects formed during theformation of the package do not flow during the process to bond all theelements of the package together. For this reason, sintered materialinterconnects such as transient liquid phase sintering or nano-metalpastes are preferred as the High Temperature Conductive Adhesive (HTCA)for the electrical connections to the components. More specificallycopper containing interconnects are preferred since these can form atransient phase with tin, the most common component termination finish.

The instant invention is also advantageous for forming embeddedcomponents and particularly embedded MLCC's. In this invention therequirement for copper vias is removed since the component terminals arereadily connected to the circuit using the previous high temperatureinterconnects described. In order to form an enclosed cavity using thesame bonding process a High Temperature Insulating Adhesive (HTIA) canbe employed and to reduce the time required an HTIA that can be cured atthe same time is preferred.

An embodiment of an embedded component is illustrated schematically inFIG. 7 . The enclosed component package shown in FIG. 7 could be astand-alone component or part of a circuit with embedded components.Using this invention, the laser drilling and connection through coppervias that is common practice for embedded components is avoided and thisconfers some important advantages with respect to selecting thecomponent terminations for improved reliability as detailed furtherherein.

In FIG. 7 , pre-assembled stack, 72, or individual components, 74, areshown sandwiched between bases, 76, comprising conductor traces, 78, andinterconnects, 80. Preformed vias, 82, provide conductivity to surfacetraces, 84, for subsequent electrical connectivity to the balance of acircuit. High temperature insulating adhesives, 86, are preferablyemployed to secure structural components of the package, such asintermediate layers, 83, which form an electrically isolating portion,to each other as would be realized to those of skill in the art. Aparticular advantage is realized in the ability to form the basecomprising the appropriate traces and vias prior to assembly. This is asignificant advantage over the art wherein vias are formed afterembedding of the components.

The electronic component can connect through multiple layers of circuitboard as illustrated schematically in FIG. 8 . In FIG. 8 , circuitboards, 88 and 90, are illustrated as laminated layers formingelectrically insulating portion between the bases, 76, wherein variousfunctionality can be provided.

Sintered material interconnects such as transient liquid phase sinteringor nano-metal pastes, preferred as the High Temperature ConductiveAdhesive (HTCA), and the High Temperature Insulating Adhesives (HTIA)can also be used to form external electrical and non-electricalconnections respectively. This can be used to combine the componentassemblies to power modules.

The thermal benefits of inventive packing have been detailed but it isalso important that components, such as MLCC's, retain their mechanicalreliability through temperature and power cycling. The coefficient ofthermal expansion mismatches within the package is of criticalconsideration in this respect. To facilitate robustness, it is thereforeimportant to retain compliancy within the package. The transient liquidphase and nano-metal interconnects of choice are not as compliant astraditional solders or conductive adhesives that use a dispersion ofmetal in a polymeric matrix. To achieve a more compliant joint it ispreferred that the components contain a compliant flexible termination.Flexible terminations can be manufactured using metal particlesdispersed in a polymeric organic material. For stand-alone modules amechanical fastening may also be applied. Furthermore, placing thecomponents in this z-direction orientation minimizes the coefficient ofthermal expansion in the longer x-y length orientation since thecomponent length is less than its width thus reducing the length of theCTE mismatch and the resulting stress during temperature cycling.

In the case of larger components, it is desirable to form multipleinterconnects to minimize the continuous interconnect length. Concernswith maintaining interconnect contacts through thermal and power cyclingcan be mitigated by applying a compressive force to the package.

A particular feature of the invention is the ability to utilize coolingelements in thermal contact with the component. As illustrated in FIG. 9, a cooling element, 92, can be in thermal contact with side surfaces,50, of the external termination of the component by a thermal interfacematerial, 94. A further advantage is provided by a pick and place pad,96, on the cooling element, 92, as illustrated schematically in FIG. 10, which provides convenience during manufacturing. The pick and placepad may be a flat pad feature that provides a method for pick and placeof the element.

Thermal interface material (TIM) can be in the form of a solid film/pad,a paste, or a liquid material. The cooling element preferably comprisesa flat faced surface to adhere to the TIM and component, and a finnedfaced surface to increase surface area and heat dissipation.

The cooling element/s may be over-molded in a plastic housing tosimplify the assembly. The modules may be formed with the MLCC's inseries or parallel with a PCB or suitable substrate material with thecooling element attached to the substrate with a TIM. The coolingelement material may be of any material that provides thermalconductivity, but preferably copper, or a metal injection molded (MIM)material, or aluminum.

In applications where the modules may be exposed to vibration, a clipcan be used to secure the module to the PCB where the clip has eithercrush ribs or barbs to secure the clip tightly in a PCB board hole andto provide stability to the MLCC module.

For the purposes of this invention electronic components are preferablyselected from transistors, capacitors and preferably MLCC's, diodes,resistors, varistors, inductors, fuses, integrated circuits, overvoltagedischarge devices, sensors, switches, electrostatic dischargesuppressors, invertors, rectifiers and filters. Particularly preferredtransistors are GaN and SiC based wide band gap devices. The componentsare preferably integral to functional devices such as AC/DC converters,DC/AC inverters, EMI/RFI filters, snubbers, harmonic filters andparticularly AC harmonic filters.

Cooling mediums can be liquid or gas at operating conditions with theproviso that the cooling medium does not significantly alter thecomposition or function of the component except to the extent thattemperature excursions, which can alter properties, are mitigated.Particularly preferred cooling mediums comprise materials selected fromthe group consisting of air; inert gas; organic materials, particularlyhalogenated organic materials and preferable chlorinated or fluorinatedorganic materials, particularly perhalogenated organics; andcombinations thereof.

A thermally conductive potting material may be used to encapsulate thecomponents in order to additionally regulate or distribute heat transferwithin the module.

EXAMPLES

Leadless capacitor stacks of commercially available KEMET KONNEKT™KC-LINK™ capacitors were mounted in different orientations and theirripple current self-heating was measured. All examples used identicalstacks of 4×3640 150 nF MLCC, CKC33C604KWG, rated at 650 Vdc. A ripplecurrent of 40 Arms (106 Vrms) at 100 kHz was applied from a nominalambient temperature of 25° C. In each case the chip stacks were mountedto narrow FR4 PCB test strips attached above and below with SAC305solder. The different orientations where Example A) internal electrodeswere perpendicular to the PCB and side surfaces of the externaltermination were mounted to the PCB; Example B) an inventive verticalmount wherein the internal electrodes were perpendicular to the PCB andparallel with the long axis of the narrow PCB and the edge surfaces ofthe external termination was mounted to the PCB referred to asTermination Mounted Parallel; Example C) an inventive vertical mountwherein the internal electrodes were perpendicular to the PCB andperpendicular with the long axis of the narrow PCB and edge surfaces ofthe external termination were mounted to the PCB referred to herein asTermination Mounted perpendicular; and Example D) a comparative standardmount wherein the internal electrodes were parallel with the PCB and theside surfaces of the external termination of the top and bottomcapacitor were mounted to the PCB referred to as Standard Orientation.Examples B and C were to insure no testing bias due to the use of narrowtest strips.

Once mounted heat sinks were clamped to the substrates to allow heat todissipate.

The design of the PCBs, the shape/size/cap value of the MLCC stack andthe configuration of the heatsinks were maintained the same from exampleto example with the only difference being the shape of the pad toaccommodate the mounting orientations.

Once mounted and thermally secured, the different orientations wereconnected with different current paths in the different examples andorientations as shown in FIG. 11 and the current path used in aparticular example are indicated by the letters which was a function ofthe design of the circuit board.

In all examples the current was increased to 40 Arms, 106 Vrms at 100kHz. Temperature increases from the nominal 25° C. ambient temperaturewere monitored via infrared camera to observe the heating of thedifferently mounted orientation examples and current pathways. Themaximum surface temperatures of the MLCC in these different exampleswere noted at the steady state condition and are summarized in Table 1.

TABLE 1 Maximum Capacitor Temperature @ 40 Arms, 100 KHz. MAX CapacitorMOUNTING CURRENT Temp @ EXAMPLE ORIENTATION Path 40 Amps 1 Standard A toB 71° C. 2 Standard A to C 71° C. 3 Low Loss A to B 42° C. 4 Low Loss Ato C 43° C. 5 Termination - Parallel A to C 32° C. 6 Termination -Parallel A to D 34° C. 7 Termination - Perpendicular A to C 31° C. 8Termination - Perpendicular A to D 32° C.

The inventive examples 5 to 7 had significantly less ripple currentheating of 31° C. to 34° C. compared to the comparative examples 3 and 4which increased to 42° C. to 43° C. The comparative examples 1 and 2 hadthe highest ripple current with heating up to 71° C. The direction ofthe current applied had only a small effect on the maximum temperaturereached. These series of examples clearly show that the inventiveexamples have significantly lower ripple current heating. This assemblyapproach allows more power/current to be applied to the circuit withoutoverheating the capacitors or other components in close proximity.Integrating MLCCs in this way into modules and circuits provides animproved structure by which heating may be reduced and this can befurther improved by conductive or convective cooling in these assemblieswherein heat is dissipated away from the components. It will be realizedby those skilled in the art that these effects will be magnified bycombining more MLCC's into a module or embedding them with the circuitboard and that these results are not limited by any particular case sizeof MLCC.

The invention has been described with reference to the preferredembodiments without limit thereto. Additional embodiments andimprovements may be realized which are not specifically set forth hereinbut which are within the scope of the invention as more specifically setforth in the claims appended hereto.

The invention claimed is:
 1. A high-density multi-component packagecomprising: a first module interconnect pad; and a second moduleinterconnect pad; an array of electronic components mounted to andbetween said first module interconnect pad and said second moduleinterconnect pad wherein a first electronic component of said electroniccomponents is vertically oriented relative to said first moduleinterconnect pad and a second electronic component of said electroniccomponents is vertically oriented relative to said second moduleinterconnect pad; wherein said first electronic component and saidsecond electronic component are first adjacent electronic componentswherein said first electronic component and said second electroniccomponent have opposite polarity; and a positive connector tab inelectrical connection with adjacent external terminations havingpositive polarity.
 2. The high-density multi-component package of claim1 wherein at least one said electronic component of said electroniccomponents comprises internal electrodes wherein said internalelectrodes are perpendicular to said module interconnect pad.
 3. Thehigh-density multi-component package of claim 1 wherein at least onesaid electronic component of said electronic components comprisesexternal terminations with each external termination of said externalterminations comprising an edge surface and side surfaces wherein onesaid edge surface is mounted to said first module interconnect pad. 4.The high-density multi-component package of claim 1 further comprising awide band gap-semiconductor device wherein said first interconnect padand said second interconnect pad are integral to said wide bandgap-semiconductor device.
 5. The high-density multi-component package ofclaim 1 wherein said first electronic component is a first multilayeredceramic capacitor and said second electronic component is a secondmultilayered ceramic capacitor.
 6. The high-density multi-componentpackage of claim 1 wherein said electrical components are mounted usinga transient liquid phase sintering adhesive.
 7. The high-densitymulti-component package of claim 1 further comprising componentterminations wherein said component terminations contain a compliantflexible termination.
 8. The high-density multi-component package ofclaim 1 further comprising an electrically conducting portion receivedin a recess of an electrically insulating portion.
 9. The high-densitymulti-component package of claim 1 wherein at least one said electroniccomponent is a multilayered ceramic capacitor.
 10. The high-densitymulti-component package of claim 1 further comprising at least onecooling component.
 11. The high-density multi-component package of claim1 further comprising at least one electrically insulated restraintarranged to secure said first module interconnect pad and said secondmodule interconnect pad in a fixed position relative to each other. 12.The high-density multi-component package of claim 6 wherein saidtransient liquid phase sintering adhesive comprises copper and tin. 13.The high-density multi-component package of claim 8 wherein at least onesaid electronic component is embed within said electrically insulatingportion.
 14. The high-density multi-component package of claim 9 whereinadjacent electronic components are multilayered ceramic capacitorshaving opposite polarity.
 15. The high-density multi-component packageof claim 10 wherein said cooling component is between said first moduleinterconnect pad and said second module interconnect pad.
 16. Thehigh-density multi-component package of claim 10 wherein said coolingcomponent is a cooling channel.
 17. The high-density multi-componentpackage of claim 10 wherein said cooling component comprises a thermalconductor.
 18. A high-density multi-component package comprising: anarray of electronic components comprising a first electronic componentof said electronic components and a second electronic component of saidelectronic components; wherein said first electronic component and saidsecond electronic component are adjacent and each comprises a firstexternal termination and a second external termination wherein each saidfirst external termination and each said second external terminationcomprises an edge surface and side surfaces; wherein adjacent saidelectronic components are opposite polarity; and a wide band-gapsemiconductor device comprising a first interconnect pad and a secondinterconnect pad wherein said first interconnect pad is electricallyconnected to said edge surface of said first external termination andsaid second interconnect pad is electrically connected to said edgesurface of said second electronic component.
 19. The high-densitymulti-component package of claim 18 wherein said first interconnect padis directly electrically connected to said edge surface of said firstexternal termination and said second interconnect pad is directlyelectrically connected to said edge surface of said second electroniccomponent.
 20. The high-density multi-component package of claim 18wherein said first electronic component comprises internal electrodes.21. The high-density multi-component package of claim 18 furthercomprising a substrate between said wide band-gap semiconductor deviceand said first electronic component wherein said substrate comprises anelectrically insulating portion and an electrically conducting portion.22. The high-density multi-component package of claim 18 wherein saidfirst interconnect pad is in direct electrical contact with said firstexternal termination.
 23. The high-density multi-component package ofclaim 18 wherein at least one of said first electronic component or saidsecond electronic component is a multilayered ceramic capacitor.
 24. Thehigh-density multi-component package of claim 18 further comprising asubstrate opposite said wide band-gap device wherein said substratecomprises a conductive portion in electrical contact with said edge ofsaid second external termination of said first electronic component. 25.The high-density multi-component package of claim 18 wherein said wideband-gap device is selected from a SiC and a GaN based device.
 26. Thehigh-density multi-component package of claim 18 further comprising atleast one cooling component.
 27. The high-density multi-componentpackage of claim 20 wherein said first internal electrodes areperpendicular to said interconnect pad.
 28. The high-densitymulti-component package of claim 21 wherein said electrically conductingportion is a via through said electrically insulating portion.
 29. Thehigh-density multi-component package of claim 25 further comprising asilicon based semiconductor.
 30. The high-density multi-componentpackage of claim 26 wherein said cooling component is between said firstinterconnect pad and said second interconnect pad.
 31. The high-densitymulti-component package of claim 26 wherein said cooling component is acooling channel.
 32. The high-density multi-component package of claim28 wherein said via is a pre-formed via.
 33. The high-densitymulti-component package of claim 31 wherein said cooling componentcomprises a thermal conductor.
 34. A method for forming a high-densitymulti-component package comprising: providing a wide band-gapsemiconductor device comprising a first interconnect pad and a secondinterconnect pad; providing a substrate; providing an array ofelectronic components wherein a first set of adjacent electroniccomponents are of opposite polarity and a second set of adjacentelectronic components have a connector tab in electrical contact withadjacent external terminations of common polarity; and mounting saidelectronic components between said substrate and said wide band-gapsemiconductor device wherein said electronic components are verticallyoriented.
 35. The method for forming a high-density multi-componentpackage of claim 34 wherein a first electronic component of saidelectronic components comprises internal electrodes and externalterminations in electrical contact with at least one internal electrodewherein said external termination comprises an edge and side surfaces.36. The method for forming a high-density multi-component package ofclaim 34 a first electronic component of said electronic components anda second electronic component of said electronic components are adjacentelectronic components.
 37. The method for forming a high-densitymulti-component package of claim 34 wherein said electrical componentsare mounted using a transient liquid phase sintering adhesive.
 38. Themethod for forming a high-density multi-component package of claim 34further comprising forming a compliant flexible termination.
 39. Themethod for forming a high-density multi-component package of claim 34comprising inserting a first electronic component of said electroniccomponents in a recess of said substrate.
 40. The method for forming ahigh-density multi-component package of claim 34 wherein at least oneelectronic component of said electronic components is a multilayeredceramic capacitor.
 41. The method for forming a high-densitymulti-component package of claim 34 wherein said substrate between saidwide band-gap semiconductor device and a first electronic component ofsaid electronic components wherein said substrate comprises anelectrically insulating portion and an electrically conducting portion.42. The method for forming a high-density multi-component package ofclaim 34 further comprising at least one cooling component.
 43. Themethod for forming a high-density multi-component package of claim 35wherein said edge surface is electrically connected to said firstinterconnect pad.
 44. The method for forming a high-densitymulti-component package of claim 35 wherein said internal electrodes areperpendicular to said first interconnect pad.
 45. The method for forminga high-density multi-component package of claim 36 wherein said firstelectronic component is a first multilayered ceramic capacitor and saidsecond electronic component is a second multilayered ceramic capacitor.46. The method for forming a high-density multi-component package ofclaim 36 wherein said first electronic component and said secondelectronic component having opposite polarity.
 47. The method forforming a high-density multi-component package of claim 37 wherein saidtransient liquid phase sintering adhesive comprises copper and tin. 48.The method for forming a high-density multi-component package of claim40 wherein adjacent said electronic components are multilayered ceramiccapacitors having opposite polarity.
 49. The method for forming ahigh-density multi-component package of claim 41 wherein said firstelectronic component is embed within said electrically insulatingportion.
 50. The method for forming a high-density multi-componentpackage of claim 41 wherein said electrically conducting portion is avia through said electrically insulating portion.
 51. The method forforming a high-density multi-component package of claim 42 wherein saidcooling component is between said first interconnect pad and said secondinterconnect pad.
 52. The method for forming a high-densitymulti-component package of claim 42 wherein said cooling component is acooling channel.
 53. The method for forming a high-densitymulti-component package of claim 42 wherein said cooling componentcomprises a thermal conductor.
 54. The method for forming a high-densitymulti-component package of claim 43 wherein said edge surface isdirectly electrically connected to said first interconnect pad.
 55. Themethod for forming a high-density multi-component package of claim 50wherein said via is a pre-formed via.